Wild Goose WGF65R850

Wild Goose · FETs & Power MOSFETs · MPN WGF65R850

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Specifications

Gate Charge(Qg)12nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)350pF
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation26W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)780mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)350pF
TypeN-Channel

Technical details

650V 6A 26W Through Hole TO-220F

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