Wild Goose WGD65R550L

Wild Goose · FETs & Power MOSFETs · MPN WGD65R550L

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Specifications

Gate Charge(Qg)16nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)27pF
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)1.9pF
RDS(on)550mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)423pF
TypeN-Channel

Technical details

650V 7A 2V 60W 550mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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