Wild Goose WGD4N65SE

Wild Goose · FETs & Power MOSFETs · MPN WGD4N65SE

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Specifications

Gate Charge(Qg)14.3nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)4A
Output Capacitance(Coss)48pF
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation50W
RDS(on)2.5Ω@10V
Reverse Transfer Capacitance (Crss@Vds)5.4pF
Number1 N-channel
Input Capacitance(Ciss)560pF

Technical details

650V 4A 50W Surface Mount TO-252

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