Wild Goose WGD10N65SE

Wild Goose · FETs & Power MOSFETs · MPN WGD10N65SE

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Specifications

Gate Charge(Qg)35nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)194pF
Current - Continuous Drain(Id)10A
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)18pF
RDS(on)800mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.5nF

Technical details

650V 10A 45W Surface Mount TO-252

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