WeEn BUJ100LR,412

WeEn · Transistors (BJTs) · MPN BUJ100LR,412

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Specifications

Current - Collector Cutoff1mA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO400V
DC Current Gain10
Pd - Power Dissipation2.1W
typeNPN
Current - Collector(Ic)1A
Operating Temperature-
Vce Saturation(VCE(sat))400mV

Technical details

400V 10 NPN 1A TO-92-3 Single Bipolar Transistors RoHS

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