Wayon · FETs & Power MOSFETs · MPN WMZ26N65C4
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| Gate Charge(Qg) | 22.1nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 135W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.5pF |
| RDS(on) | 160mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.31nF |
650V 18A 2V 135W 160mΩ@10V 1 N-channel PDFN-4(8x8) Single FETs, MOSFETs RoHS