Wayon WMQ50P03T1

Wayon · FETs & Power MOSFETs · MPN WMQ50P03T1

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)35nC@10V
Output Capacitance(Coss)465pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation69W
Reverse Transfer Capacitance (Crss@Vds)370pF
RDS(on)14mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)3.52nF
TypeP-Channel

Technical details

P-Channel 30V 50A 69W Surface Mount DFN-8(3x3)

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