Wayon WMO80N08TS

Wayon · FETs & Power MOSFETs · MPN WMO80N08TS

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)68.7nC@10V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation133W
Reverse Transfer Capacitance (Crss@Vds)157pF
RDS(on)12mΩ@10V
Input Capacitance(Ciss)4.15nF
TypeN-Channel

Technical details

80V 80A 4V 133W 12mΩ@10V N-Channel TO-252 Single FETs, MOSFETs RoHS

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