Wayon · FETs & Power MOSFETs · MPN WMO5N50D1B
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| Gate Charge(Qg) | 14nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 5A |
| Output Capacitance(Coss) | 55pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 45W |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF |
| RDS(on) | 1.35Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 460pF |
| Type | N-Channel |
500V 5A 3V 45W 1.35Ω@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS