Wayon · FETs & Power MOSFETs · MPN WMO35N06T1
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| Gate Charge(Qg) | 14.5nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 90pF |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 44.6W |
| RDS(on) | 25mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 74pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.75nF |
| Type | N-Channel |
60V 35A 2.5V 44.6W 25mΩ@4.5V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS