Wayon · FETs & Power MOSFETs · MPN WMO2N100D1
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| Output Capacitance(Coss) | 69pF |
|---|---|
| Pd - Power Dissipation | 60W |
| Configuration | - |
| Drain to Source Voltage | 1kV |
| Gate Charge(Qg) | 17nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| RDS(on) | 6.3Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 698pF |
60W 1kV 3V 6.3Ω@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS