Wayon · FETs & Power MOSFETs · MPN WMO25N10T1
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| Gate Charge(Qg) | 37.9nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 61.5pF |
| Current - Continuous Drain(Id) | 25A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 53.2W |
| RDS(on) | 35mΩ@10V;42mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.332nF |
| Type | N-Channel |
N-Channel 100V 25A 53.2W Surface Mount TO-252