Wayon WMO175N10LG2

Wayon · FETs & Power MOSFETs · MPN WMO175N10LG2

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Specifications

Gate Charge(Qg)17.8nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)355pF
Current - Continuous Drain(Id)44A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation65.8W
Reverse Transfer Capacitance (Crss@Vds)11pF
RDS(on)17.5mΩ@10V
Input Capacitance(Ciss)1.17nF
TypeN-Channel

Technical details

N-Channel 100V 44A 65.8W Surface Mount TO-252

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