Wayon WMO15N10T1

Wayon · FETs & Power MOSFETs · MPN WMO15N10T1

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)20.6nC
Output Capacitance(Coss)53pF
Current - Continuous Drain(Id)14.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation41.7W
RDS(on)105mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)42pF
Number1 N-channel
Input Capacitance(Ciss)1.22nF
TypeN-Channel

Technical details

N-Channel 100V 14.6A 41.7W Surface Mount TO-252

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