Wayon · FETs & Power MOSFETs · MPN WMM36N65C4
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 46nC@10V |
| Current - Continuous Drain(Id) | 36A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 277W |
| RDS(on) | 97mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 2.8pF |
| Input Capacitance(Ciss) | 2.25nF |
| Type | N-Channel |
650V 36A 4V 277W 97mΩ@10V N-Channel TO-263-2 Single FETs, MOSFETs RoHS