Wayon · FETs & Power MOSFETs · MPN WML30N65EM
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| Gate Charge(Qg) | 18nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 27A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 34W |
| RDS(on) | 160mΩ@10V |
| Input Capacitance(Ciss) | 1.91nF |
| Type | N-Channel |
650V 27A 4V 34W 160mΩ@10V N-Channel TO-220F Single FETs, MOSFETs RoHS