Wayon WML28N65F2

Wayon · FETs & Power MOSFETs · MPN WML28N65F2

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Specifications

Gate Charge(Qg)27.3nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)23A
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation31W
RDS(on)190mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.775nF
TypeN-Channel

Technical details

N-Channel 650V 23A 31W Through Hole TO-220F

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