Wayon WML26N60C4

Wayon · FETs & Power MOSFETs · MPN WML26N60C4

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Specifications

Gate Charge(Qg)22.1nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)48pF
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation135W
Reverse Transfer Capacitance (Crss@Vds)1.5pF
RDS(on)160mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.31nF

Technical details

N-Channel 600V 18A 135W Through Hole TO-220F

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