Wayon WML25N80M3

Wayon · FETs & Power MOSFETs · MPN WML25N80M3

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Specifications

Gate Charge(Qg)45nC@10V
Drain to Source Voltage800V
Output Capacitance(Coss)90pF
Current - Continuous Drain(Id)21A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation250W
RDS(on)210mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)2.8pF
Number1 N-channel
Input Capacitance(Ciss)2.224nF

Technical details

N-Channel 800V 21A 250W Through Hole TO-220F

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