Wayon · FETs & Power MOSFETs · MPN WML25N65EM
No reviews yet — be the first to review Wayon WML25N65EM.
| Gate Charge(Qg) | 36nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 59pF |
| Current - Continuous Drain(Id) | 22A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 34W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.2pF |
| RDS(on) | 190mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.47nF |
| Type | N-Channel |
N-Channel 650V 22A 34W Through Hole TO-220F