Wayon WML15N65C4

Wayon · FETs & Power MOSFETs · MPN WML15N65C4

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Specifications

Gate Charge(Qg)14.6nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation31W
RDS(on)300mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)1.6pF
Input Capacitance(Ciss)770pF
TypeN-Channel

Technical details

N-Channel 650V 13A 31W Through Hole TO-220F

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