Wayon WML14N65C4

Wayon · FETs & Power MOSFETs · MPN WML14N65C4

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)13nC@10V
Output Capacitance(Coss)21.5pF
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation31W
Reverse Transfer Capacitance (Crss@Vds)2.3pF
RDS(on)380mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)665pF
TypeN-Channel

Technical details

N-Channel 650V 11A 31W Through Hole TO-220F

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