Wayon · FETs & Power MOSFETs · MPN WML13N65EM
No reviews yet — be the first to review Wayon WML13N65EM.
| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 20.3nC@10V |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 31W |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 390mΩ@10V |
| Input Capacitance(Ciss) | 710pF |
650V 11A 4V 31W 390mΩ@10V TO-220F Single FETs, MOSFETs RoHS