Wayon · FETs & Power MOSFETs · MPN WML10N65C4
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 3.5nC@10V |
| Output Capacitance(Coss) | 19pF |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 27W |
| RDS(on) | 600mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 950fF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 415pF |
650V 8A 27W Through Hole TO-220F