Wayon WMJ38N60C2

Wayon · FETs & Power MOSFETs · MPN WMJ38N60C2

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)60nC@10V
Output Capacitance(Coss)100pF
Current - Continuous Drain(Id)38A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.2V
Pd - Power Dissipation277W
Reverse Transfer Capacitance (Crss@Vds)1.8pF
RDS(on)99mΩ@10V
Input Capacitance(Ciss)2.94nF
TypeN-Channel

Technical details

600V 38A 4.2V 277W 99mΩ@10V N-Channel TO-247 Single FETs, MOSFETs RoHS

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