Wayon WMJ36N60C4

Wayon · FETs & Power MOSFETs · MPN WMJ36N60C4

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)46nC@10V
Current - Continuous Drain(Id)36A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation277W
RDS(on)97mΩ@10V
Input Capacitance(Ciss)2.25nF

Technical details

600V 36A 4V 277W 97mΩ@10V TO-247 Single FETs, MOSFETs RoHS

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