Wayon · FETs & Power MOSFETs · MPN WMJ26N60C4
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| Drain to Source Voltage | 600V |
|---|---|
| Configuration | - |
| Gate Charge(Qg) | - |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 135W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 190mΩ@10V |
| Number | - |
| Input Capacitance(Ciss) | 1.31nF |
600V 18A 4V 135W 190mΩ@10V TO-247 Single FETs, MOSFETs RoHS