Wayon WMJ26N60C4

Wayon · FETs & Power MOSFETs · MPN WMJ26N60C4

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Specifications

Drain to Source Voltage600V
Configuration-
Gate Charge(Qg)-
Current - Continuous Drain(Id)18A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation135W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)190mΩ@10V
Number-
Input Capacitance(Ciss)1.31nF

Technical details

600V 18A 4V 135W 190mΩ@10V TO-247 Single FETs, MOSFETs RoHS

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