Wayon WMD7N50RC

Wayon · FETs & Power MOSFETs · MPN WMD7N50RC

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Specifications

Gate Charge(Qg)14nC@10V
Drain to Source Voltage500V
Current - Continuous Drain(Id)7A
Output Capacitance(Coss)68pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation100W
RDS(on)1.1Ω@10V
Reverse Transfer Capacitance (Crss@Vds)9pF
Number1 N-channel
Input Capacitance(Ciss)532pF
TypeN-Channel

Technical details

500V 7A 5V 100W 1.1Ω@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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