Wayon · FETs & Power MOSFETs · MPN WMB85N06T2
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| Gate Charge(Qg) | 60nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 85A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 81W |
| RDS(on) | 3.6mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 78pF |
| Input Capacitance(Ciss) | 3.55nF |
| Type | N-Channel |
60V 85A 2.3V 81W 3.6mΩ@10V N-Channel PDFN-8(5x6) Single FETs, MOSFETs RoHS