Wayon WMB100N04TS

Wayon · FETs & Power MOSFETs · MPN WMB100N04TS

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)95nC@10V
Output Capacitance(Coss)430pF
Current - Continuous Drain(Id)125A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation96W
RDS(on)4.6mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)325pF
Input Capacitance(Ciss)5.21nF
TypeN-Channel

Technical details

N-Channel 40V 125A 96W Surface Mount PDFN5060-8L

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