Wayon · FETs & Power MOSFETs · MPN WMB080N10HG2
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 60nC@10V |
| Output Capacitance(Coss) | 370pF |
| Current - Continuous Drain(Id) | 74A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 80.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 8.5pF |
| RDS(on) | 8mΩ@10V |
| Input Capacitance(Ciss) | 2.25nF |
| Type | N-Channel |
100V 74A 4V 80.6W 8mΩ@10V N-Channel TDSON-8(5.1x5.9) Single FETs, MOSFETs RoHS