Wayon · FETs & Power MOSFETs · MPN WMB043N10LGS
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| Gate Charge(Qg) | 111.2nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 768pF |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 131.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF |
| RDS(on) | 6.7mΩ@4.5V |
| Input Capacitance(Ciss) | 5.475nF |
| Type | N-Channel |
N-Channel 100V 120A 131.6W Surface Mount PDFN5060-8L