Wayon WMB020N03LG4

Wayon · FETs & Power MOSFETs · MPN WMB020N03LG4

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Specifications

Gate Charge(Qg)29.5nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)1.09nF
Current - Continuous Drain(Id)125A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)68pF
RDS(on)1.4mΩ@10V;2mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.08nF
TypeN-Channel

Technical details

30V 125A 1.6V 50W 1 N-channel N-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS

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