Wayon WM06N03ME

Wayon · FETs & Power MOSFETs · MPN WM06N03ME

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Specifications

Output Capacitance(Coss)5.6pF
Pd - Power Dissipation350mW
Drain to Source Voltage60V
Configuration-
Gate Charge(Qg)610pC
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
Reverse Transfer Capacitance (Crss@Vds)2.2pF
RDS(on)1.3Ω@10V
Number1 N-channel
Input Capacitance(Ciss)25pF

Technical details

350mW 60V 1.4V 1.3Ω@10V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS

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