Wayon WM03N58M

Wayon · FETs & Power MOSFETs · MPN WM03N58M

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)7.5nC@4.5V
Output Capacitance(Coss)70pF
Current - Continuous Drain(Id)5.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
Pd - Power Dissipation1.2W
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)52mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)560pF
TypeN-Channel

Technical details

N-Channel 30V 5.8A 1.2W Surface Mount SOT-23

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