Wayon WM03N32M

Wayon · FETs & Power MOSFETs · MPN WM03N32M

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Specifications

Gate Charge(Qg)6nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)3.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation350mW
RDS(on)47mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)-
Number1 N-channel
Input Capacitance(Ciss)295pF
TypeN-Channel

Technical details

N-Channel 30V 3.2A 350mW Surface Mount SOT-23

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