Wayon WM02P30M

Wayon · FETs & Power MOSFETs · MPN WM02P30M

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Specifications

Gate Charge(Qg)3.3nC@2.5V
Drain to Source Voltage20V
Output Capacitance(Coss)75pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)65pF
RDS(on)90mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)616pF
TypeP-Channel

Technical details

P-Channel 20V 3A 1W Surface Mount SOT-23

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