Wayon WM02N50M

Wayon · FETs & Power MOSFETs · MPN WM02N50M

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)10.5nC@4.5V
Output Capacitance(Coss)120pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)105pF
RDS(on)35mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)700pF
TypeN-Channel

Technical details

N-Channel 20V 5A 1.25W Surface Mount SOT-23

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