Wayon WM02N31M

Wayon · FETs & Power MOSFETs · MPN WM02N31M

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)2.9nC
Output Capacitance(Coss)54pF
Current - Continuous Drain(Id)3.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation700mW
Reverse Transfer Capacitance (Crss@Vds)43pF
RDS(on)45mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)300pF
TypeN-Channel

Technical details

N-Channel 20V 3.1A 700mW Surface Mount SOT-23

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