Wayon · FETs & Power MOSFETs · MPN WM02DN48M3
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| Gate Charge(Qg) | 60nC |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 73pF |
| Current - Continuous Drain(Id) | 4.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 1W |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| RDS(on) | 30mΩ@4.5V |
| Input Capacitance(Ciss) | 515pF |
| Type | N-Channel |
20V 4.8A 1.2V 1W 30mΩ@4.5V N-Channel SOT-23-6L Single FETs, MOSFETs RoHS