VISHAY · Thyristors & Power Discretes · MPN VS-GT50YF120NT
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| Pd - Power Dissipation | 231W |
|---|---|
| Current - Collector(Ic) | - |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Operating Temperature | -40℃~+150℃@(Tj) |
231W 1.2kV IGBT Modules RoHS