VISHAY · FETs & Power MOSFETs · MPN SUP90330E-GE3
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| Gate Charge(Qg) | 32nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 35.1A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| RDS(on) | 37.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.172nF |
200V 35.1A 4V 125W 37.5mΩ@10V 1 N-channel TO-220AB Single FETs, MOSFETs RoHS