VISHAY SUP90140E-GE3

VISHAY · FETs & Power MOSFETs · MPN SUP90140E-GE3

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Specifications

Gate Charge(Qg)64nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)246pF
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)21pF
RDS(on)17mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.132nF
TypeN-Channel

Technical details

N-Channel 200V 90A 125W Through Hole TO-220AB

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