VISHAY SUP90100E-GE3

VISHAY · FETs & Power MOSFETs · MPN SUP90100E-GE3

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Specifications

Gate Charge(Qg)110nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)450pF
Current - Continuous Drain(Id)150A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation375W
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)12.4mΩ@7.5V
Number1 N-channel
Input Capacitance(Ciss)3.93nF
TypeN-Channel

Technical details

N-Channel 200V 150A 375W Through Hole TO-220AB

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