VISHAY · FETs & Power MOSFETs · MPN SUP85N10-10-E3
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| Gate Charge(Qg) | 160nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 665pF |
| Current - Continuous Drain(Id) | 85A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 265pF |
| RDS(on) | 12mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.55nF |
| Type | N-Channel |
N-Channel 100V 85A Through Hole TO-220AB