VISHAY SUP80090E-GE3

VISHAY · FETs & Power MOSFETs · MPN SUP80090E-GE3

No reviews yet — be the first to review VISHAY SUP80090E-GE3.

Specifications

Drain to Source Voltage150V
Gate Charge(Qg)95nC@10V
Current - Continuous Drain(Id)128A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)26pF
RDS(on)9.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.425nF

Technical details

150V 128A 5V 9.4mΩ@10V 1 N-channel TO-220AB Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs