VISHAY SUP70030E-GE3

VISHAY · FETs & Power MOSFETs · MPN SUP70030E-GE3

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)214nC@10V
Current - Continuous Drain(Id)150A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation375W
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)3.84mΩ@7.5V
Number1 N-channel
Input Capacitance(Ciss)10.87nF
TypeN-Channel

Technical details

100V 150A 4V 375W 3.84mΩ@7.5V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs RoHS

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