VISHAY · FETs & Power MOSFETs · MPN SUP60030E-GE3
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 141nC@10V |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 348pF |
| RDS(on) | 3.6mΩ@7.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.91nF |
| Type | N-Channel |
80V 120A 4V 125W 3.6mΩ@7.5V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs RoHS