VISHAY · FETs & Power MOSFETs · MPN SUP57N20-33-E3
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| Gate Charge(Qg) | 130nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 33A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 3.75W |
| Reverse Transfer Capacitance (Crss@Vds) | 210pF |
| RDS(on) | 33mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.1nF |
N-Channel 200V 33A 3.75W Through Hole TO-220AB