VISHAY SUP50020EL-GE3

VISHAY · FETs & Power MOSFETs · MPN SUP50020EL-GE3

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Specifications

Gate Charge(Qg)126nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)475pF
RDS(on)2.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)11.113nF

Technical details

60V 120A 2.5V 2.3mΩ@10V 1 N-channel TO-220AB Single FETs, MOSFETs RoHS

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